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Name Hoang, Duc Quang
Employer Faculty of Civil Engineering, Ton Duc Thang University
Position Researcher
Languages Vietnamese, English
Address19 Nguyen Huu Tho, TanPhong Ward, District 7, HoChiMinh City, Vietnam
Emailhoangducquang@tdtu.edu.vn or ducquang78@gmail.com
Tell (+84) 972 352 640

HOANG, DUC QUANG

10 December 2018 / Comments

RESEARCH INTERESTS

  • 2D wide bandgap nanomaterials, i.e. hBN nanowalls, CVD diamond, graphene;
  • Magnetic permalloy nanomaterials, i.e.NiFe/CoFe thin films, nanowires, bilayers;
  • Ceramic perovskite materials, i.e. LaSrMnO, LaSrPbMnO, PrBaMnO;
  • Exchange biased bilayers, i.e. IrMn/CoFe;
  • Magnetic spin-valves and transistors, i.e. IrMn/CoFe, IrMn/CoFe/Cu/CoFe, FeMn/CoFe/AlOx/CoFe and FeMn/CoFe/MgO/CoFe;
  • Nano-deposition techniques, i.e. RF/DC/AC sputtering&pulsed laser depositions;
  • Nano-characterization techniques, i.e. FTIR/Raman/EELS/EDX/SIMS/EXAFS spectroscopies, T/STEM (BF, DF, ED, HR-TEM & Lorentz TEM), SQUID, ac susceptibility; VSM and EPR/ESR;
  • Nano-fabrication techniques, i.e. ion-milling, patterning and irradiation with FIB-SEM;
  • TEM sample preparation techniques, i.e. FIBand gentle ion milling TEM x-sections;

ACADEMIC QUALIFICATIONS

  • Ph.D. in Materials Physics, Hasselt University & IMEC, Belgium (2017);
  • MSc. by Research in Condensed Matter Physics, University of Glasgow, UK (2011);
  • MSc. in Solid State Physics, Chungbuk National University, South Korea (2005);
  • B.S. in Solid State Physics, Hanoi National University, Vietnam (2000);

PROFESSIONAL ACCOMPLISHMENTS

   A. PEER-REVIEWED ARTICLES

  • NAFOSTED-2020 – National Foundation for Science and Technology Development, Vietnam (Key-member), Studying some ferromagnetic materials for spintronic applications(04/2020 – 04/2022): 31 000 USD.
  • NAFOSTED-2019 – National Foundation for Science and Technology Development, Vietnam (PI), Domain wall propagation in domain wall trap Ni80Fe20 nanostructures(09/2019 – 09/2021): 30 000 USD.
  • BOF2019 | VISITING FELLOWS | BOF19KV03, Hasselt University, Belgium (PI), 2D hexagonal boron nitride nanostructures for water cleaning application (01/2019 – 03/2019): 5 950 EUR.
  • Hasselt University &IMEC, Belgium (PI), Nucleation and growth mechanisms of sputtered hexagonal boron nitride nanowalls (04/2012 – 03/2016): 119 200 EUR. 
  • SUPA University of Glasgow, UK (PI), A study of tailored domain wall geometries in ferromagnetic nanowires using Lorentz microscopy (08/2007 – 12/2011): 93 800 GBP.
  • BK21 Chungbuk National University| KIST| Samsung, Korea (Member), CIP-giant magneto-resistance effects in spin-valve structures (09/2005 – 07/2007): 34 000 USD.
  • Tohoku University, Japan (Member): Exchange-bias effects in ferromagnetic/antiferromagnetic thin films (07 – 11/2006): 7000 USD

B. RESEARCH PROJECTS

  • D.Q. Hoang, V.A. Dao, D.H. Nguyen, D.T. Ngo, K.J. Sankaran, P. Pobedinskas, M. K. Van Bael, J. Verbeeck, S.S. Nicley and K. Haenen,Dynamic processes of B and N atoms at the early stage of thin film growth in a unbalanced RF sputtering, J. Appl. Phys. (2020) [in preparation].
  • D. Q. Hoang, X. H. Cao, H. T. Nguyen and V. A. Dao, Single defects inducing the asymmetric degree of the transverse domain walls created in Ni80Fe20 nanowires,Appl. Phys. Lett. (2020) [to be submitted].
  • D.Q. Hoang, X. H. Cao, H. T. Nguyen and V. A. Dao,Single domain wall propagation in 2D magnetic nano-traps under field pulses, J. Phys. Soc. Jpn. (2020) [submitted].
  • D.Q. Hoang, X. H. Cao, H. T. Nguyen and V. A. Dao, Creation and propagation of a single magneticdomain wall in 2D nanotraps with an injection square pad, Nanotechnology(2020) [submitted].
  • D. M. Hoat, D. Q. Hoang, M. Naseri, J. F. Rivas-Silvae, A. I. Kartamyshev and G. H. Cocoletzi, Computational prediction of the spin-polarized semiconductor equiatomic quaternary Heusler compound MnVZrP as spin-filters, RSC Adv. (2020) [accepted].
  • D.M. Hoat, D.Q. Hoang, M. Naserid, R.P. Pérez, N.T.T. Binh, J. F. Rivas-Silva, G.H. Cocoletzi, Newequiatomic quaternary Heusler compounds without transition metals KCaBX (X = S and Se): Robusthalf-metallic and optical properties, J. Mol. Graph. Model. 99 (2020) 107642.
  • A.N. Ulyanov, D.Q. Hoang, N. Kuznetsova and S.C. Yu, Negative imaginary component of AC magnetic susceptibility, metastable states, and magnetic relaxation in La0.6Sr0.35MnTi0.05O3, Funct. Mater. Lett.13 (2020) 2050023.
  • V. T. Vu, H. Nguyen, D. Q. Hoang, T. P. Dao, C. V. Nguyen, H. V. Phuc, N.N. Hieu, H. Luong, H. Tong and D. K. Pham, The characteristics of defective ZrS2monolayers adsorbed various gases on S-vacancies: Afirst-principles study, Superlattice. Microst. 140 (2020) 106454.
  • B. D. Mai, H. T. Nguyen and D.Q. Hoang, Influence of cellulose nanoparticles on structure and dielectricproperties of ferroelectrics, Mater. Trans. 60(2019) 2499.
  • B.D. Mai, H.T. Nguyen and D.Q. Hoang, A novel composite from nanodispersed silica and an organicferroelectric of diisopropylammonium bromide: preparation, characterization and dielectric properties, Mater. Trans. 60 (2019) 2132.
  • D.Q. Hoang, V.N.M. Ho, X.H. Cao, H. T. Nguyen and V.A. Dao, Tailoring sidewall profiles of magnetictunnel junctions fabricated with various etching conditions, Jpn. J. Appl. Phys. 58 (2019) 093001.
  • V.N. M. Ho, L.D.A. Ho, M.T. Tran, X.H. Cao, V. A. Dao, D.H. Tong, D. T. Ngo, D.Q. Hoang, Exploringcharacteristics of the corner sections of a domain wall trap nanostructure with the two-field directionmethod, RSC Adv. 8 (2018) 41828.
  • L.D.A. Ho, M.T. Tran, X.H. Cao, V.A. Dao, D.T. Ngo, D.Q. Hoang,Field-driven single domainwall motion in ferromagnetic nanowires, RSC Adv. 8 (2018) 14539.
  • D.Q. Hoang, M.T. Tran, X.H. Cao, D.T. Ngo,The effect of edge-roughness of magneticnanowires on the degree of asymmetry in transverse domain walls, RSC Adv. 7 (2017) 49188.
  • D.Q. Hoang, S. Korneychuk, K.J. Sankaran, P. Pobedinskas, S. Drijkoningen, S. Turner, M.K.Van Bael, J. Verbeeck, S.S. Nicley, K. Haenen, Direct nucleation of hexagonal boron nitride ondiamond: Crystalline properties of hBN nanowalls, Acta Mater. 127 (2017) 17.
  • K.J. Sankaran, D.Q. Hoang, S. Korneychuk, S. Kunuku, J.P. Thomas, P. Pobedinskas, S.Drijkoningen, M.K. Van Bael, J. D’Haen, J. Verbeeck, K.C. Leou, K.T. Leung, I.N. Lin, K. Haenen,Hierarchical hexagonal boron nitride nanowall-diamond nanorod heterostructures enhanceoptoelectronic performance, RSC Adv. 6 (2016) 90338.
  • K.J. Sankaran, D.Q. Hoang, K. Srinivasu, S. Korneychuk, S. Turner, S. Drijkoningen, P. Pobedinskas, J. Verbeeck, K.C. Leou, I.N. Lin, K. Haenen, Engineering the interface characteristicson the enhancement of field electron emission properties of vertically aligned hexagonal boronnitride nanowalls, Phys. Status Solidi A 213 (2016) 2654.
  • D.Q. Hoang, P. Pobedinskas, S.S. Nicley, S. Turner, S.D. Janssens, M.K. Van Bael, J. D’Haen, K.Haenen, Elucidation of the growth mechanism of sputtered 2D hexagonal boron nitride nanowalls,Cryst. Growth Des. 16 (2016) 3699.
  • K.J. Sankaran, D.Q. Hoang, K. Srinivasu, S. Korneychuk, S. Turner, P. Pobedinskas, S. Drijkoningen,M.K. Van Bael, J. D’Haen, J. Verbeeck, K.C. Leou, I. N. Lin, K. Haenen, Enhancedoptoelectronic performances of vertically aligned hexagonal boron nitride nanowalls nanocrystallinediamond heterostructures, Sci. Rep. 6 (2016) 29444.
  • D.C. Leitao, R.J. Macedo, A.V. Silva, D.Q. Hoang, D.A. MacLaren, S. McVitie, S. Cardoso,P.P. Freitas, Optimization of exposure parameters for lift-off process of sub-100 features using anegative tone electron beam resist, 12th IEEE-NANO (2012): DOI: 10.1109/NANO.2012.63219452/6
  • A.N. Ulyanov, H.D. Quang, N.E. Pismenova, S. C. Yu and G.G. Levchenko, Pr0.7Ca0.15Ba0.15MnO3manganite: Electron paramagnetic resonance, conductivity and susceptibility, Solid State Commun.152 (2012) 1556.
  • D.T. Ngo, H.G. Duong, H.H. Nguyen, C. Nguyen, M. Basith, D.Q. Hoang, The microstructure,high performance magnetic hardness and magnetic after-effect of an a-FeCo/Pr2Fe14Bnanocomposite magnet with low Pr concentration, Nanotech. 20 (2009) 165707.
  • A.N. Ulyanov, H.D. Quang, K.W. Lee, S.C. Yu, N.H. Sinh, Y.M. Kang, S.I. Yoo, Magneticrelaxation behavior in Nd0.5Sr0.5MnO3: observation of negative imaginary component of acmagnetic susceptibility, IEEE Trans. Magn. 44 (2008) 3060.
  • H.D. Quang, N.H. Sinh, S.K. Oh, T.N. Huynh, J. Zidanic, N.T. Hien, S. C. Yu, Reactionmechanism of chemical elements (Co, Fe, Mn) existing in spin valves containing oxide layers,Jpn. J. Appl. Phys. 45 (2006) 088.
  • H.D. Quang, C.X. Huu, S.K. Oh, V.S. Dang, N.H. Sinh, S.C. Yu, Magneto-transport properties of magnetic tunneling transistors at low and room temperatures, Nanotech. 17 (2006) 3359.
  • H.D. Quang, N.H. Sinh, S.K. Oh, N.T. Hien, S.C. Yu, Micro-structural change and hightemperature properties of constituent elements (Fe, Co, Mn, Cu) in spin valves containing oxidelayers, J. Phys. D: Appl. Phys. 38 (2005) 3560.
  • A.N. Ulyanov, H.D. Quang, N.E. Pismenova, S.C. Yu, EPR and resistivity study ofPr0.7Ba0.3MnO3 manganite, IEEE Trans. Magn. 41 (2005) 2745.
  • H.D. Quang, N.T. Hien, S.K. Oh, N.H. Sinh, S.C. Yu, Chemical properties and GMR improvementof specular spin valves with nano-oxide layers, formed in ambient mixed gases, J. Phys. D:Appl. Phys. 37 (2004) 3290.
  • A.N. Ulyanov, H.D. Quang, M. Vasundhara, C. Nguyen, S.C. Yu, Adiabatic polaron transportin La0.9Pb0.1MnO3 manganites, Phys. Status Solidi B 241 (2004) 1482.
  • H.D. Quang, N.T. Hien, S.K. Oh, S.C. Yu, Effects of mixed gases on characteristics of specularspin-valves containing oxide layers, Phys. Status Solidi A 201 (2004) 3129.
  • M.H. Phan, S.B. Tian, D.Q. Hoang, S.C. Yu, C. Nguyen, A.N. Ulyanov, Large magnetic-entropychange above 300 K in CMR materials, J. Magn. Magn. Mater. 258-259 (2003) 309.